Original Research
Published on 12 Dec 2025
Enhanced electrical stability of IGZO thin-film transistors using atomic layer deposited Al2O3/HfO2 dual-layer gate insulator
in Semiconducting Materials and Devices
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Original Research
Published on 12 Dec 2025
in Semiconducting Materials and Devices
Original Research
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in Semiconducting Materials and Devices
Editorial
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in Semiconducting Materials and Devices
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in Semiconducting Materials and Devices
Original Research
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Mini Review
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in Semiconducting Materials and Devices
Original Research
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in Semiconducting Materials and Devices
Editorial
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Review
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in Semiconducting Materials and Devices
Perspective
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in Semiconducting Materials and Devices
Original Research
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in Semiconducting Materials and Devices
Original Research
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in Semiconducting Materials and Devices
Original Research
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in Semiconducting Materials and Devices
Original Research
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in Semiconducting Materials and Devices
Original Research
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in Semiconducting Materials and Devices
Original Research
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in Semiconducting Materials and Devices
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in Semiconducting Materials and Devices
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in Semiconducting Materials and Devices
Original Research
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in Semiconducting Materials and Devices
Review
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in Semiconducting Materials and Devices